CVE-2021-42114: Micron DDR4 Sdram Firmware

High severity, CVSS 8.3. EPSS: 3% chance of exploitation in the next 30 days.

Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.

Affected products

• Micron DDR4 Sdram Firmware: affected versions not specified
• Micron LDDR4 Firmware: affected versions not specified
• Samsung DDR4 Sdram Firmware: affected versions not specified
• Samsung LDDR4 Firmware: affected versions not specified
• Skhynix DDR4 Sdram Firmware: affected versions not specified
• Skhynix LDDR4 Firmware: affected versions not specified

Published 2021-11-16. Last modified 2026-06-17.